SI1903DL ,Dual P-Channel 2.5-V (G-S) MOSFETS-21374—Rev. B, 12-Aug-022-1YYSi1903DLVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
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SI1903DL
Dual P-Channel 2.5-V (G-S) MOSFET
VISHAY
Si1903DL
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.995 @ N/ss = -4.5 v cl: 0.44
-20 1.190 @ VGS = -3.6 v cl: 0.40
1.80 @ Vss = -2.5 v :1: 0.32
SOT-363
SC-70 (6-LEADS)
SI [I lil E] D1
G1E I] Els,
D2 3 -d]l-r4] S2
Top Jew
Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDs -20
Gate-Source Voltage VGS i 12
TA = 25°C 10.44 $0.41
Continuous Drain Current (TJ = 150oC)a ID
TA-- 85°C $031 $0.30 A
Pulsed Drain Current 'DM i1 0
Continuous Diode Current (Diode Conduction)a ls -0.25 -0.23
TA = 25°C 0.30 0.27
Maximum Power Dissipation" PD W
TA=85°C 0.16 0.14
Operating Junction and Storage Temperature Range Tr Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
' . - - . a
Maximum Junction to Ambient Steady State RthJA 400 460 ''C11N
Maximum Junction-to-Foot (Drain) Steady State Rm“: 300 350
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71081 www.vishay.com
S-21374-Rev. B, 12-Aug-02
Si1903DL
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A -0.6 V
Gate-Body Leakage less VDs = 0 V, VGS = ck 12 V cl: 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
VDs=-16V,VGS=OV.TJ=85°C -5
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -1.0 A
VGS = -4.5 V, ID = -0.41 A 0.850 0.995
Drain-Source On-State Resistancea rDs(on) VGs = -3.6 V ID = -0.38 A 1.0 1.190 Q
VGS = -2.5 MID = -0.25 A 1.4 1.80
Forward Transconductancea gfs VDS = -10 V, ID = -0.41 A 0.8
Diode Forward Voltagea VSD IS = -0.23 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 1.2 1.8
Gate-Source Charge Qgs VDs = -10 V, VGS = -4.5 V, ID = -0.41 A 0.45 nC
Gate-Drain Charge di 0.25
Turn-On Delay Time tam) 7.5 15
Rise Time tr VDD = -10 V, RL = 20 Q 20 40
Turn-Off Delay Time td(off) ID _ -0.5 A, VGEN = -4.5 M Rs = 6 Q 8.5 17 ns
Fall Time tr 12 24
Source-Drain Reverse Recovery Tlme trr IF = -0.23 A, di/dt = 100 Alps 25 40
a. Pulsetest; pulse width 5 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0 l _ 1.0 l _
/ VGS = 5 thru 3 V To = .5500 /
0.8 f 2.5 v 0.8 25°C 7
ii;". _iaC:'., il
"if,' 0.6 ,,,,e''''''" g 0.6 y
g 5 125°C
(i, 0 4 (i-, 0 4
5 . 2 V ch .
- 0.2 - 0.2
1 Y 1.5 V
0.0 I 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71081
2-2 S-21374-Reu. B, 12-Aug-02
VISHAY
Si1903DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Vcs = 2.5 v .
I’Dsmn) - On-Resistance ( £2)
-'''" VGS = 3.6 V
VGS = 4.5 V
0.0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current(A)
Gate Charge
1 1 A"
Vros=10V
lro=0.41A /
VGS - Gate-to-Source Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
To =150°c
Is - Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
80 l,,, Ciss
..---,
it Coss
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 4.5 V
ID = 0.41 A
1.4 //
1.2 ',,,,ww''''"
J8 '.,,,p'''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
2.0 \ lo = 0.41 A
1.5 Ns,
1.0 "s,..
""-----...
0 1 2 3 4
VGS - Gate-to-Source Voltage (V)
DocumentNumber: 71081
S-21374-Rev. B, 12-Aug-02
www.vishay.com
Si1903DL 'Gai';
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
ID = 250 11A
ty 0.2 ',,,,,W''''
g ws'''''' E 3 l
E 0.1 I a \
gi" s,,,,,.'''" r33 2 t
i?," l
> 0 0 l
-0 1 's
-0.2 0
-50 -25 0 25 50 75 100 125 150 10-3 10'2 1O-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' a 0.2
lit ' th1 T
u L 0.1 PDM
I': E . 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 400°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
Il a 0.2
if',' g
E ' 0.1
l? E 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71081
2.4 S-21374-Reu. B, 12-Aug-02
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