SI1905DL ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-99188—Rev. A, 01-Nov-992-1YYSi1905DLNew ProductVishay Siliconix
SI1905DL
Dual P-Channel 1.8-V (G-S) MOSFET
Si1905DL
New Product Vishay Siliconix
VISHAY
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY or, ks''''
VDs (V) rosmn, (C2) ID (A) tte,',' bos ily
ss'' Mb'
0.600 @ VGS = -A.5 v ck 0.60 9 "
-8 0.850 @ VGS = -2.5 v $0.50 l .N
1.200 @ sz = -1.8 v i042
SOT-363
SC-70 (6-LEADS)
s, l: Ti? El D1 Marking Code
G1 I: El G2 Lot Traceability
J and Date Code
TIT Part # Code
D 3 4 s
2 l I El 2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -8
Gate-Source Voltage VGS d: 8
TA = 25°C i050 i057
Continuous Drain Current (To = 150°C)a ID
TA-- 85°C i043 10.41 A
Pulsed Drain Current 'DM $1.0
Continuous Diode Current (Diode Conduction)a ls -0.25 -0.23
TA = 25°C 0.30 0.27
Maximum Power Dissipationa PD W
TA=85°C 0.16 0.14
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
Maximum Junction-to-Ambient" Rth0A
Steady State 400 460 "C/W
Maximum Junction-to-Foot (Drain) Steady State Rm”: 300 350
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71082 www.vishay.com . FaxBack 408-970-5600
S-99188-Rev, A, 01-Nov-99 2-1
Si1905DL
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 [1A -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 8 V cl: 100 nA
VDS = -64 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss “A
VDS = -64 V, VGS = 0 V, TJ = 85°C -5
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -A.5 V -1.0 A
VGS = -4.5 v, ID = -0.57 A 0.51 0.600
Drain-Source On-State Resistancea roman) VGs = -2.5 V, ID = -0.48 A 0.720 0.850 Q
VGs=-1.8V, lD=-0.20A 1.0 1.200
Forward Transconductancea Ws VDs = -10 V, ID = Ah57 A ld?
Diode Forward Voltage" VSD ls = -C23 A, VGS = 0 V Ah8 -1.2 V
Dynamicb
Total Gate Charge Q9 1.5 2.3
Gate-Source Charge Qgs Vos = -4 V, VGS = -4.5 V, ID = -0.57 A 0.17 nC
Gate-Drain Charge di 0.16
Turn-On Delay Time tdwn) 6 12
Rise Time tr VDD = -4 V, RL = 8 Q 25 50
Turn-Off Delay Tlme tam) b E -0.5 A, VGEN = -A.5 V, Rs = 6 Q IO 20 ns
Fall Time k 10 20
Source-Drain Reverse Recovery Time trr IF = Ah23 A, di/dt = 100 Ms 20 40
a. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0 I 1.0 I I
v68: 5thru 2.5V "'''" 2V TC=_55°(I J)
0.8 I! I 0.8 25°C I
irg /f( iii] 125°C
E 0.6 E 0.6
E 1.5 V E
E 0.4 E 0.4
- 0.2 'l - 0.2
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71082
S-99188-Rev, A, OI-Nov-SN
VISHAY
Si1905DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
I 1.5 - V = 1.8 V
f1i. /
g w,,,.,-"'''''''''
é 1.0 / -
O V = 2. V
I w,,,,,,,--''''''''''" GS l 5
53), VGS - 4.5 V
0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
Gate Charge
VDS = 4 V
ID = 0.57 A
s /'''
,,,/''''
VGS — Gate-to-Source Voltage (V)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
To =150°C
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
a''-.-,
't Coss
"r-.....,
2 4 6 8
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 0.57 A
w,,,,''''''
"-'"''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 0.57A
o 1 2 3 4 5
l/ss - Gate-to-Source Voltage (V)
Document Number: 71082
S-99188-Rev, A, 01-Nov-99
www.vishay.com . FaxBack 408-970-5600
Si1905DL
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.3 40
ID = 250 1A
S 0.2 w,,,,.'''''
E o,,.,,.-''"''" g 30 l
j',' 0.1 ',,ew'''' g \
ef.?.: a 20 ',
-0 1 1/ IO “K
-0.2 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E 1
E t1 _
ly, -ly-1 te
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A =400°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
3?. 0.2
E , 0 1
LU N .
8 g 0.1 05
t, 0.02
Single Pulse
104 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
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b4 S-99188-Rev, A, OI-Nov-SN
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