SI1907DL ,Dual P-Channel 1.8-V (G-S) MOSFETS-21374—Rev. B, 12-Aug-022-1YYSi1907DLVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
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SI1907DL
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1907DL
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.650 @ N/ss = -4.5 v :l: 0.56
-12 0.925 @ VGS = -2.5 v cl: 0.47
1.310@VGS= -13 v $0.39
SOT-363
SC-70 (6-LEADS)
'fi.?i
.tttlt,
'ttl' bos
'wrtsis
01E '1
Marking Code
Lot Traceability
and Date Code
Part # Code
D2 3 -d]l-r4] S2
Top Jew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDs -12
Gate-Source Voltage VGS ch 8
TA = 25°C 1055 $0.53
Continuous Drain Current (TJ = 150oC)a ID
TA-- 85°C $040 $0.38 A
Pulsed Drain Current 'DM i1.0
Continuous Diode Current (Diode Conduction)a ls -0.25 -0.23
TA = 25°C 0.30 0.27
Maximum Power Dissipation" PD W
TA=85°C 0.16 0.14
Operating Junction and Storage Temperature Range Tr Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
Maxi J tiorrto-Ambienta R
ax1mum unc Ion o m Ien Steady State thJA 400 460 ''C11N
Maximum Junction-to-Foot (Drain) Steady State Rm“: 300 350
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71083 www.vishay.com
S-21374-Rev. B, 12-Aug-02
Si1907DL
Vishay Siliconix
IE=7'"
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 MA -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDS = -9.6 V, VGS = O V -l
Zero Gate Voltage Drain Current loss 11A
Vos = -9.6 V, VGS = 0 V, TJ = 85°C -5
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -1.0 A
VGS = -4.5 V, ID = -0.53 A 0.570 0.650
Drain-Source On-State Resistancea rDs(on) VGs = -2.5 V ID = -0.44 A 0.800 0.925 Q
VGS = -1.8 MID = -0.20 A 1.250 1.310
Forward Transconductancea gfs VDS = -10 V, ID = Ah53 A 1.1
Diode Forward Voltagea VSD IS = -0.23 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 1.5 2.3
Gate-Source Charge Qgs Vros = -6 V, l/ss = -4.5 V, ID = -0.53 A 0.40 nC
Gate-Drain Charge di 0.25
Turn-On Delay Time tam) 6 12
Rise Time tr VDD = -6 V, RL = 12 Q 20 40
Turn-Off Delay Time tam“, ID _ -0.5 A, VGEN = -4.5 M Rs = 6 C2 10 20 ns
Fall Time tr 10 20
Source-Drain Reverse Recovery Tlme trr IF = -0.23 A, di/dt = 100 Alps 20 40
a. Pulsetest; pulse width 5 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0, 1.0 I I
VGS= 5thru2.5V (i/i, Je---- -55''C / /
0.8 0.8 Tczsoc‘ _..--,", y
ii;". _iaC:'., /1 125°C
E 0.6 E 0.6
.5 Il, 5 V E
g 0.4 g 0.4
- 0.2 / - 0.2
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Vollage(V) VGS - Gate-to-Source Voltage(V)
www.vishay.com DocumentNumber: 71083
2-2 S-21374-Reu. B, 12-Aug-02
VISHAY
Si1907DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
6? 2.5
' 7 VGS = 1.8 v /
8 1.5 -,.-''"
[A w.....----''-"'" VGS = 2.5 V
VGS = 4.5 V
0.0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current(A)
Gate Charge
VDS = 6 v
s. ID = 0.53 A /
fi? 4 p"
m o,,/''"
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
To =150°c
Is - Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
Capacitance
JI'. 90
0 2 4 6 8 10 12
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 4.5 V
A ID = 0.53 A
g 1.4 wi'''
E "ii" s,,,,,,,,.'''''''
i),' (il 1 2 ,/
8 <2 /
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
g 2.0 Io=0.53A
33 1.5
8 'ss,
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
DocumentNumber: 71083
S-21374-Rev. B, 12-Aug-02
www.vishay.com
Si1907DL 'Gai';
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
ID = 250 “A
ty 0.2
E E 3 l
g 0.1 b' \
gi" fi] 2 t
i?," l
> 0 0 l
w,.,-''''" 1 k
-0 1 / ,
" "s,,
-0.2 0
-50 -25 0 25 50 75 100 125 150 10-3 10'2 IO-l 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' a 0.2
lit ' th1 T
u L 0.1 PDM
I': E . 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 400°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
Il a 0.2
if',' g
E ' 0.1
l? E 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71083
2.4 S-21374-Reu. B, 12-Aug-02
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