SI2301BDS-T1 ,P-Channel 2.5-V (G-S) MOSFETS-31990—Rev. B, 13-Oct-033V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curren ..
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SI2301BDS-T1
P-Channel 2.5-V (G-S) MOSFET
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VISHAY
Si2301BDS
P-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rioston) (Q) ID (Nb
o.1oo@VGs= -4.5 v -2.4
-20 o.150@sz= -2.5 v -2.0
T0-236
(SOT-23)
321:2;
Top Mew
Si2301 BDS (L1)*
*Marking Code
Vishay Siliconix
Ordering Information: Si2301BDS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage Vos -20
Gate-Source Voltage VGS i8
TA-- 25°C -2.4 -2.2
Continuous Drain Current (TJ = 150°C)b ID
TA-- 70°C -1.9 -1.8
Pulsed Drain Currenta los, -10
Continuous Source Current (Diode Conduction)b Is -0.72 -O.6
TA-- 25°C 0.9 0.7
Power Dissipationb Po W
TA-- 70°C 0.57 0.45
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb 120 145
. . . RthJA ''C/W
Maximum Junction-to-Ambient? 140 175
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t s 5 sec.
C. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72066
S-31990-ReV. B, 13-Oct-03
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Si2301BDS
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS Ves = 0 V, ID = -250 IIA -20
Gate-Threshold Voltage VGS(th) Vros = VGs, ID = -250 11A -0.45 -0.95
Gate-Body Leakage less VDS = O V, VGS = i 8 V i 100 nA
VDs---20V,VGs--0V -1
Zero Gate Voltage Drain Current bss 11A
Vos-- -20V,Vss--0V,TJ--55c'C -1O
Vos S -5 V,Vss= -4.5V -6
On-State Drain Currenta 'D(0n) A
Vos S -5 V,Vss= -2.5V -3
VGS = -4.5 V, ID = -2.8 A 0.080 0.100
Drain-Source On-Resistancet1 rDS(on) Q
Mas-- -2.5 MID=-2.0A 0.110 0.150
Forward Transconductancea gfs VDs = -5 V, ID = -2.8 A 6.5 S
Diode Forward Voltage VSD ls = -0.75 A, Vas = O V -O.80 -1.2
Dynamicb
Total Gate Charge ag 4.5 10
_ hs-- -6V,VGs= -4.5V
Gate Source Charge Qgs ID E -2.8A 0.7 no
Gate-Drain Charge di 1.1
Input Capacitance Ciss 375
Output Capacitance COSS VDS = -6 V, VGS = 0, f = 1 MHz 95 pF
Reverse Transfer Capacitance Crss 65
Switching''
two”, 20 30
Turn-On Time
tr VDD-- -6 V,RL=6Q 40 60
ID E -1.0A,VGEN= -4.5V ns
tum) RG = 6 Q 30 45
Turn-Off Time
tf 20 30
a. Pulse test: PW s 300 ps duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. . FaxBack 408-970-5600
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DocumentNumber: 72066
S-31990-F%v. B, 13-Oct-03
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VISHAY
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
I I/es = 5thru 2.5 V
if- y 2 v
CI 1.5 V
O 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A vss = 2.5 V
s5.. _...,,..----"""
f? 0.1
VGS = 4.5 V
O 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vros = 10 V
ID = 2.8 A
i', 3 r
0 1 2 3 4 5
09 - Total Gate Charge (nC)
| D - Drain Current (A)
rDS(on)- On-Resistance (Q
C - Capacitance(pF)
(Normalized)
Transfer Characteristics
T = -55°C jj/
25°C a
6 125 C -
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
400 -..-,
ies, coss
M--.-,
0 4 8 12 16 20
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.8 A
1.4 //
1 2 'w''''''''"
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 72066
S-31990-ReV. B, 13-Oct-03
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Si2301BDS “3%
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
3 To = 150°C v
- a: 0.4
it .1rd ID = 2.8 A
g 0:? 0.3
' J... 0.2
m 3 N,,
' 0.1 \
0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 10
0.3 l (
E 0.2 w''''''''
0) A 6
2 ID = 250 11A t
E 0.1 ts
i'-', ',,,i''" t N
t, n. 4
S 0.0 l
T _ 25°C
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000
T J - Temperature (°C) Time (sec)
Sate Operating Area
10 10 us
cg 100 us
(3 1 1 ms
CI 10 ms
t TA = 25°C
2 Single Pulse
0.1 100 ms
dc, 100 s, 10 s, 1 s
0.1 1 10 100
I/os - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
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4 S-31990-F%v. B, 13-Oct-03
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VISHAY
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
ttx E 0.1
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = 7,
2, Per Unit Base = RNA = 62.5°C/W
3. Tos, - TA = PDMZmJA“)
4. Surface Mounted
1 0 1 00 600
Document Number: 72066
S-31990-ReV. B, 13-Oct-03
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