SI2304BDS ,N-Channel 30-V (D-S) MOSFETS-32412—Rev. B, 24-Nov-031Si2304BDSNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI2304DDS , N-Channel 30-V (D-S) MOSFET
SI2304DS ,N-channel TrenchMOS intermediate level FETSI2304DSN-channel enhancement mode field-effect transistorRev. 01 — 17 August 2001 Product dataM3D08 ..
SI2305ADS-T1-E3 , P-Channel 8-V (D-S) MOSFET
SI2305ADS-T1-E3 , P-Channel 8-V (D-S) MOSFET
SI2305ADS-T1-GE3 , P-Channel 8-V (D-S) MOSFET
SJPB-D4 , Schottky Barrier Rectifier
SK006D , RoHS Compliant, Electrically-isolated package
SK006L , RoHS Compliant, Electrically-isolated package
SK006V , RoHS Compliant, Electrically-isolated package
SK008D , RoHS Compliant, Electrically-isolated package
SK008L , RoHS Compliant, Electrically-isolated package
SI2304BDS
N-Channel 30-V (D-S) MOSFET
VISHAY
Si2304BDS
New Product
N-Channel 30-v (D-S) MOSFET
PRODUCT SUMMARY
Wm M rDS(on) (Q) ID (A)
0.070 @ VGS = 10 v 3.2
30 0.105@VGS=4.5 v 2.6
TO-236
(SOT-23)
Top ifery
Si2304BDS (L4)*
*Marking Code
Ordering Information: Si2304BDS-T1-E3
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage vss t 20
b TA = 25°C 3.2 2.6
C ti D . C t =150°C a, I
on lnuous ran urren (To ) TA = 70°C D 2.5 2.1
Pulsed Drain Current bs, 10
Continuous Source Current (Diode Conduction)' b ls 0.9 0.62
TA = 2500 1.08 0.75
Maximum Power Dissipation' b PD W
TA = 70°C 0.69 0.48
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t S 5 sec 90 115
Maxi J tion-to-Ambienta R
axlmum unc lo" o m len Steady State WA 130 166 "C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
a. Surface Mounted on FR4 Board, t s 5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72503
S-32412-Rev. B, 24-Nov-03
www.vishay.com
Si2304BDS
Vishay Siliconix
New Product
IE=7'"
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min I Typ I Max Unit
Static
Drain-Source Breakdown Voltage V(Bswss VGS = 0 V, ID = 250 pA 30
Gate-Threshold Voltage Vegan) Vros = Was, ID = 250 WA 1.5 3.0
Gate-Body Leakage lass Vos = O V, VGS = $20 V l 100 nA
VDs=30V,Vas=0V 0.5
Zero Gate Voltage Drain Current loss VDs = 30 M vss = 0 V, Tu = 55°C 10 WA
Vros = 30 V, VGS = 1.0 V, TJ =25°C 1
On-State Drain Currenta |D(on) VDS 2 4.5 V, VGS = 10 V 6 A
D s o R VGS =10 v, ID = 2.5 A 0.055 0.070 Q
. _ _ . a
ram ource n esistance roger.) VGS =4.5 V, ID = 2.0A 0.080 0.105
Forward Transconductancea gfs VDs = 4.5 V, ID = 2.5 A 6.0 S
Diode Forward Voltage VSD ls = 1.25 A, VGS = 0 V 0.8 1.2
Dynamic
Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 2.5 A 2.6 4
Total Gate Charge 09, 4.6 7 n C
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 2.5 A 0.8
Gate-Drain Charge di 1.15
Gate Resistance R9 f= 1.0 MHz 3.0 Q
Input Capacitance Ciss 225
Output Capacitance Coss VDS = 15 V, VGS = O V, f = 1 MHz 50 pF
Reverse Transfer Capacitance Crss 28
Switching
Turn-On Delay Time tdmn) 7.5 12
Rise Time t, Von =15 v, RL = 15 Q 12.5 20 ns
Turn-Off Delay Time tisom [D E 1 A, VGEN = 10 V, HG = 6 n 19 30
Fall-Time tf 15 25
a. Pulse test: PW s300 us duty cycle s2%.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 10thru 5V
ig". gl"
ff 6 E 6
E' 4 I' 4
I 4 V I To = 125°C
- 2 l - 2
3 V -551
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com DocumentNumber: 72503
2 S-32412-Rev. B, 24-Nov-03
VISHAY
Si2304BDS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
"iii" 0.20
.,S. 0.16
6 0.12 /
I Ves = 4.5 V
Cfs] 0.08 IC'...'.'......,,...,..,.--'''''''''
g VGS = 10 v
0 2 4 6 B 10
ID - Drain Current (A)
Gate Charge
VDS = 15 V /'''
E ID = 2.5 A /
0 1 2 3 4 5
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu = 150°C
_ 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roam) - On-Resistance (9)
(Normalized)
rDS(0n) — On-Resistance (Q)
Capacitance
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
"6 l 1
Vss--10V
|D=2.5A
w,,,,,,-'''''
1.2 s,,,,,,,-'''''"
-50 -25 O 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 2.5A
"s-s,,,,....,
o 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 72503
S-32412-Rev. B, 24-Nov-03
www.vishay.com
Si2304BDS 'Gai';
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 10
0.2 8 \
ID = 250 HA l
i,' -0.0 TA = 25°C
2 E 6 Single Pulse
.g "s, v N
y -0.2 "ht g N
s. o. 4
il'" \0
> -0.4 'ss, 'N,
-0.6 "N "
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (''C) Time (sec)
Safe Operating Area
r Limited
DS(an) IDM Limited
10 10 us
E 100 us
c 1 ms
D, 10 ms
0 I l l I III
- TA = 25°C
0.1 Single Pulse 100 ms
dc,100s,10s,1s
BVDSS Limited -
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li Duty Cycle = 0.5
"'ii' g Notes:
E g -T-
8 a 0.1 POM
2 ,5 k
E tl v-
B _'L_ ta t1
a 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 130°C/W
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com
DocumentNumber: 72503
S-32412-Rev. B, 24-Nov-03
:
www.loq.com
.
