SI4426DY ,20-V (D-S) Single FaxBack 408-970-5600S-01041—Rev. B, 15-May-002-1Si4426DYNew ProductVishay Siliconix
SI4426DY
20-V (D-S) Single
VISHAY
New Product
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
20 0.025 @ sz = 4.5 v 21:8.5
0.035@Vss=2.5V ce7.1
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Top View
N-Channel MOSFET
Si4426DY
Vishay Siliconix
'wrtsis
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos V
Gate-Source Voltage VGS 12
TA=25°C $8.5 i6.5
Continuous Drain Current (TJ = 150°C)a ID
TA=7O°C 16.8 15.2 A
Pulsed Drain Current (10 us Pulse VWdth) IBM :40
Continuous Source Current (Diode Conduction)" ls 2.1 2.1
TA = 25°C 2.5 1.5
Maximum Power Dissipationa PD W
TA = 70°C 1.6 0.9
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 38 50
Maximum Junction-to-Ambient" RthJA
Steady State 70 85 °CNV
Maximum Junction-to-Foot (Drain) Steady State RthJF 20 25
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71107
S-01041-Rev, B, 15-May-00
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Si4426DY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage less VDS = 0 V, VGS = l 12 V i 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
Vros=20V,Vss--0V,Tu=55oC 5
On-State Drain Current3 IMO") Vos 2 5 V, VGS = 4.5 v 40 A
. . VGS = 4.5 V, ID = 8.5 A 0.019 0.025
Drain-Source On-State Resistances rDS(on) Q
VGS = 2.5 V, ID = 7.1 A 0.025 0.035
Forward Transconductancea gfs Vos = 10 V, ID = 8.5 A 27 S
Diode Forward Voltagea VSD ls = 2.1 A, VGS = O V 0.8 1.2
Dynamic"
Total Gate Charge Q9 25 50
Gate-Source Charge Qgs Vos = 10 V, VGS = 4.5 V, ID = 8.5 A 6.5 nC
Gate-Drain Charge ' 4
Turn-On Delay Time td(on) 4O 60
Rise Time tr vDD = 10 v, RL = 10 Q 40 60
Turn-Ott Delay Time tims) '0 E 1 A, VGEN = 10 V, RG = 6 Q 90 150 ns
Fall Time tf 40 60
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/gs 4O 60
a. Pulse test; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o tt UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 . 40
VGS = 5 thru 3 V J,
2.5 V l
30 r L 30 1,
Ct ci..
g 20 / is 20
5 2 V 5
I I Tc = 125°C
CI IO k o 10 i
25°C ssyj)j
I, 1.5 V
l -55"C)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0
VDs - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage(V)
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Document Number: 71107
S-01041-Rev, B, 15-May-00
Si4426DY
New Product Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.10 4000
Cl 0.08 3200 k
t; A NSS.,,, Ciss
o5. 8 '"----
3 0.06 8 2400
A 0.04 8 1600
s, VGS = 2.5 v I
fl _.....k O " Coss
0.02 800
VGS = 4.5 v 'ss,
l Crss
0 10 20 30 40 0 4 8 12 16 20
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 I 1.4 I I
F VDs=10V Vss--4.5V
V 10:3.5A A 1.3- ID=8.5A
8, 4 / Cl .
E t,,,,,/'" tD
> g A /
o - T7 1.2
e 3 1 3 h' /'"
J] “F E /
g 8 g 1.1 "
g. - I V
I E 1.0
0.9 //
0 0.8 w,,,,,,,.''''''
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
a:" TJ = 150°C It
'C." 8
's E; 006 ID = 8.5 A
8 Cl) 0.04
f 0.02
0 O 2 0 4 0 6 O 8 1 0 1 2 1 4 0
. . . . . . . 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) l/ss - Gate-to-Source Voltage (V)
Document Number: 71107 www.vishay.com . FaxBack 408-970-5600
S-01041-Rev, B, 15-May-00 2-3
Si4426DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th)Variance (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "ss, 40
ID = 250 “A
Aho 30 (
Power (W)
-0.4 10 N
"s",,.,,,
-0.6 0
-50 -25 0 25 50 75 100 125 150 104 IO-l 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
(s.'--'.,':?,; 0.2
li 3 .
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E I
E t1 _
ly, -ly-1 t2 1
a 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 70°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
8 E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
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S-01041-Rev, B, 15-May-00
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