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SI4450DY
50-V (D-S) Single
VISHAY
Si4450DY
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.024@VGs=101/ 7.5
0.03 @ Mas = 6.0 v 6.5
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Ordering Information: Si4450DY
Si445ODY-T1 (with Tape and Reel)
N-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 60
Gate-Source Voltage VGS $20
TA = 25°C 7.5
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C 5.5
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)" Is 2.1
TA = 25°C 2.5
Maximum Power Dissipation" PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient?' RthJA 50 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 70144 www.vishay.com
S-03951-Rev. E, 26-May-03
Si4450DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 “A 2 V
Gate-Body Leakage less VDs = 0 V, VGS = cl: 20 V l 100 nA
VDS=60V,VGS=0V 1
Zero Gate Voltage Drain Current hoss VDS = 60 V, VGS = O V, To = 55°C 20 WA
On-State Drain Currentb lD(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 7.5 A 0.020 0.024
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 6.0 V, ID = 6.5 A 0.025 0.03
Forward Transconductanceb gts VDs = 15 V, ID = 7.5 A 18.5 S
Diode Forward voltage? VSD ls = 2.1 A, VGS = 0 V 0.75 1.2
Dynamic
Total Gate Charge % 31 50
Gate-Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 7.5 A 7.7 nC
Gate-Drain Charge di 8.3
Gate Resistance R9 1 5.8 Q
Turn-On Delay Time tum") 16 30
Rise Time tr VDD = 30 V, RL = 30 Q 11 20
Turn-Off Delay Time tum) lo _ 1 A, VGEN = 10 V, Re = 6 Q 41 80 ns
Fall Time 1f 21 40
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 Alps 46 80
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
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Document Number: 70144
S-03951-Rev. E, 26-May-03
VISHAY
Si4450DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10 thru 6V
(is 20 5 V
4, 3 V
0 1 -.
0 2 4 6 8 10
I/ns - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0 04 I
I-'; 0.03 GS 6 "...-''''T
8 s....---''" l/ss = 10 V
o; ---.
8 0.02
5' 0.01
O 10 20 3O 4O 50
ID - Drain Current(A)
Gate Charge
VGS=30V /
8-ID--7-5A /
tl' 6 /
§ -/'"
o 7 14 21 28 35
Q9 - TotaIGate Charge(nC)
— On-Resistance ( S2
rDS(on)
ID - Drain Current(A)
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = 125°C
10 'fi" 25 C
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
1200 (
N, COSS
Crss "'''----..._,
0 10 20 30 40 50 60
Vros - Drain-to-Source Voltage (V)
2 0 On-Resistance vs. Junction Temperature
VGS = 1 D V ',,,,,,,p''''''''
1.6 - ID = 7.5 A ,,,,,,w'''
1.2 "---'''"
0.8 //
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
Document Number: 70144
S-03951-Rev. E, 26-May-03
www.vishay.com
Si4450DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.06
iii] E 0 0 ( ID = 7.5 A
- o . 4
o T J = 150°C ff 0.03
ii-,', k 'ss
, I 0.02
- 0.01
1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 100
0.4 "s,
0.2 "s, ,
-0 0 I =250 A "
ID D H 60
= -0.2 ttc L N
g 's, b'
Ici" -0.4 hc a 40
0 's, ,
> 'trc l,
-0.6 's.
"N, 20 N
-0.8 N. 's,
"N, ''s.
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 DM
_.Li _
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 50°CIW
Normalized Effective Transient
Thermal Impedance
3. Tos, - TA = PDMZmJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
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2.4 S-03951-Rev. E, 26-May-03
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