SI4466 ,Single N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 VDS(on ..
SI4466 ,Single N-Channel 2.5V Specified PowerTrench MOSFETApplications High power and current handling capability.• DC/DC converter Load switch Battery pr ..
SI4466DY ,Single N-Channel 2.5V Specified PowerTrench MOSFETS-31062—Rev. D, 26-May-03 1Si4466DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4466DY ,Single N-Channel 2.5V Specified PowerTrench MOSFETS-31062—Rev. D, 26-May-03 2I - Drain Current (A)DI - Drain Current (A)DSi4466DYVishay SiliconixTY ..
SI4466DY ,Single N-Channel 2.5V Specified PowerTrench MOSFETS-31062—Rev. D, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4467DY ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Power managementlow RDS(ON)• Load s ..
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SI4466
Single N-Channel 2.5V Specified PowerTrench MOSFET
Si4466DY FDS6570A January 2001 Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. R = 0.0075 Ω @ V = 4.5 V DS(on) GS using Fairchild Semiconductor's advanced R = 0.010 Ω @ V = 2.5 V. PowerTrench process that has been especially tailored DS(on) GS to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (47nC typical). These devices are well suited for low voltage and battery Fast switching speed. powered applications where low in-line power loss and High performance trench technology for extremely fast switching are required. low R . DS(ON) Applications High power and current handling capability. • DC/DC converter Load switch Battery protection D D 5 4 D D 6 3 7 2 G S S 1 8 SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 12 V GSS ± I Drain Current - Continuous (Note 1a) 15 A D - Pulsed 50 (Note 1a) PD Power Dissipation for Single Operation 2.5 W (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R JA Thermal Resistance, Junction-to-Ambient 50 C/W ° θ R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 4466 Si4466DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si4466DY Rev. A
