SI4466DY ,Single N-Channel 2.5V Specified PowerTrench MOSFETS-31062—Rev. D, 26-May-03 1Si4466DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4466DY ,Single N-Channel 2.5V Specified PowerTrench MOSFETS-31062—Rev. D, 26-May-03 2I - Drain Current (A)DI - Drain Current (A)DSi4466DYVishay SiliconixTY ..
SI4466DY ,Single N-Channel 2.5V Specified PowerTrench MOSFETS-31062—Rev. D, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
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SI4466DY
Single N-Channel 2.5V Specified PowerTrench MOSFET
VISHAY
Si4466DY
N-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q)
ID (A)
0.009 @ VGS = 4.5 v
0.013 © N/ss = 2.5 v
OUJUJU)
Ordering Information:
Top Mew
Si4466DY
Si4466DY-T1 (with Tape and Reel)
N-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS cl: 12
TA=25°C 13.5 9.5
Continuous Drain Current (To = 15tPC)a ID
TA=7O°C 10.5 7.5
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)" ls 2.7 1.36
TA = 25°C 3.0 1.5
Maximum Power Dissipation" PD W
TA = 70°C 1.9 0.95
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ”C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t < 10 sec 33 42
Maximum Junction-to-Ambienta RthJA
Steady State 70 84 ''CllN
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
a. Surface Mounted on FR4 Board, t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 71820
S-31062-Rev. D, 26-May-03
www.vishay.com
Si4466DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 LA 0.6 1.0 1.4 V
Gate-Body Leakage less Vos = 0 V, VGS = l 12 V d: 100 nA
VDS=16V,VGS=0V 1
Zero Gate Voltage Drain Current IDss uA
VDS=16V,VGS=0V,TJ=55°C 5
On-State Drain Currenta 'D(on) Vos 2 5 V, VGS = 4.5 V 30 A
VGS = 4.5 V, ID =13.5 A 0.0055 0.009
Drain-Source On-State Resistancea rDS(0n) Q
VGS = 2.5 V, ID = 11 A 0.0078 0.013
Forward Transconductancea gfs Vos = 10 V, ID = 13.5 A 70 S
Diode Forward Voltage3 VSD ls = 2.7 A, VGS = O V 0.70 1.1
Dynamicb
Gate Charge as, 40 60
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 13.5 A 7 nC
Gate-Drain Charge di 12
Gate Resistance Rs 0.5 1.9 3.3 Q
Turn-On Delay Time tdmn) 20 30
Rise Time tr VDD = 10 V, RL = 10 Q 15 25
Turn-Off Delay Time tdmm lo - 1 A, VGEN = 10 V, Re = 6 Q 150 250 ns
Fall Tlme tf 70 110
Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 Alps 55 90
a. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 l 50
VGS = 5thru 2.5 V
Ct..". Ct J
E“ 30 2 V E 30 l
E 20 E 20
o a TC = 125°C
_ 10 _ 10 l
25°C /
J -55°C
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71820
2 S-31062-Rev. D, 26-May-03
VISHAY
Si4466DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.016
g 0.012
8 VCs = 2.5 v
' 0.008
0.004 VGS = 4.5 V
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
6 _ _ V
VDS = 10 v
s. 5 ID = 13.5 A /
fi).' pr
g. 3 /
o 10 20 30 40 50 60
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
Is - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
\ Coss
4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
lro=13.5A
ll o,,,/'''
VGS = 4.5 V
-25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
b=13.5A
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71820
S-31062-Rev. D, 26-May-03
www.vishay.com
Si4466DY 'EFuir,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 200 )
0.2 160
ID = 250 “A
-0.2 "ssc
Power (W)
V650,» Variance (V)
-0.6 40 N
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
g E 0.2
"if',' E
it E th1 T
U g 0.1 PDM
8 f? l
T, _ 0.05
g -21 t2 t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 70°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71820
4 S-31062-Rev. D, 26-May-03
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