SI4480DY ,80V N-Channel PowerTrench MOSFETFeatures• 7.6 A, 80 V. R = 0.029 Ω @ V = 10 VThis N-Channel MOSFET has been designed specificallyDS ..
SI4480DY ,80V N-Channel PowerTrench MOSFET S-03951—Rev. D, 26-May-03 1Si4480DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4480DY ,80V N-Channel PowerTrench MOSFETFDS3580Si4480DYJanuary 2001Si4480DY 80V N-Channel PowerTrench MOSFET
SI4480EY ,80-V (D-S) SingleS-03951—Rev. B, 26-May-032-1Si4480EYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4480EY-T1 ,N-Channel 80-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-1Si4480EYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4482DY ,N-Channel, 100-V SingleS-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance (Ω ) I - Drain Curr ..
SL2055 , PREAMPLIFIER FOR REMOTE CONTROL USE
SL2055 , PREAMPLIFIER FOR REMOTE CONTROL USE
SL2150F , Front End Power Splitter with AGC
SL2150F , Front End Power Splitter with AGC
SL22 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbols SL22 SL23 UnitsDevice m ..
SL23 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERElectrical Characteristics (TA = 25°C unless otherwise noted)Parameter Symbols SL22 SL23 UnitsMaxim ..
SI4480DY
80V N-Channel PowerTrench MOSFET
FDS3580 Si4480DY January 2001 Si4480DY 80V N-Channel PowerTrench MOSFET General Description Features • 7.6 A, 80 V. R = 0.029 Ω @ V = 10 V This N-Channel MOSFET has been designed specifically DS(ON) GS to improve the overall efficiency of DC/DC converters using R = 0.033 Ω @ V = 6 V. DS(ON) GS either synchronous or conventional switching PWM controllers. • Low gate charge (34nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R • Fast switching speed. DS(ON) specifications. • High performance trench technology for extremely low R . The result is a MOSFET that is easy and safer to drive DS(ON) (even at very high frequencies), and DC/DC power supply • High power and current handling capability. designs with higher overall efficiency. D D 5 4 D D 6 3 7 2 G S 1 8 S SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage 20 V GSS ± I Drain Current - Continuous (Note 1a) 7.6 A D - Pulsed 50 (Note 1a) P Power Dissipation for Single Operation 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 50 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 4480 Si4480DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si4480DY Rev. A
