SI4532DY ,Dual N- and P-Channel Enhancement Mode Field Effect TransistorSi4532DYSeptember 1999Si4532DY*Dual N- and P-Channel Enhancement Mode Field Effect Transistor
SI4539ADY ,Complementary MOSFET Half-Bridge (N- and P-Channel)S-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
SI4539ADY ,Complementary MOSFET Half-Bridge (N- and P-Channel)S-03951—Rev. B, 26-May-032-1Si4539ADYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTE ..
SI4539ADY-T1 ,N- and P-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-1Si4539ADYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTE ..
SI4539ADY-T1 ,N- and P-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
SI4539DY ,Dual N & P-Channel Enhancement Mode Field Effect TransistorSi4539DYDual N- and P-Channel 30-V (D-S) Rated MOSFETProduct SummaryV (V) r () I (A)DS DS(on) D0.0 ..
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SI4532DY
Dual N- and P-Channel Enhancement Mode Field Effect Transistor
Si4532DY September 1999 Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power � N-Channel 3.9A, 30V.R = 0.065Ω @V = 10V DS(ON) GS field effect transistors are produced using Fairchild’s R = 0.095Ω @V = 4.5V. propretary, high cell density, DMOS technology. This very DS(ON) GS high density process is especially tailored to minimize � P-Channel -3.5A,-30V.R = 0.085Ω @V = -10V DS(ON) GS on-state resistance and provide superior switching R = 0.190 Ω @V = -4.5V. performance. These devices are particularly suited for DS(ON) GS low voltage applications such as notebook computer power management and other battery powered circuits � High density cell design for extremely low R . DS(ON) where fast switching, low in-line power loss, and resistance to transients are needed. � High power and current handling capability in a widely ����used surface mount package. � Dual (N & P-Channel) MOSFET in surface mount ����package. ’� ’� ’� ’� *� 6� *� 62�� 6� 7 &XQOHVVRWKHUZLVHQRWHG $EVROXWH�0D[LPXP�5DWLQJV��$ 6\PERO3DUDPHWHU1&KDQQHO3&KDQQHO8QLWV 99’UDLQ6RXUFH9ROWDJH’66 99*DWH6RXUFH9ROWDJH*66 $,’UDLQ&XUUHQW&RQWLQXRXV1RWHD’ 3XOVHG :33RZHU’LVVLSDWLRQIRU’XDO2SHUDWLRQ’ 3RZHU’LVVLSDWLRQIRU6LQJOH2SHUDWLRQ1RWHD 1RWHE 1RWHF &772SHUDWLQJDQG6WRUDJH-XQFWLRQ7HPSHUDWXUH5DQJHWR °-67* 7KHUPDO�&KDUDFWHULVWLFV &:7KHUPDO5HVLVWDQFH-XQFWLRQWR$PELHQW°5-$ θ &:7KHUPDO5HVLVWDQFH-XQFWLRQWR&DVH1RWH °5-& θ 3DFNDJH�0DUNLQJ�DQG�2UGHULQJ�,QIRUPDWLRQ ’HYLFH0DUNLQJ’HYLFH5HHO6L]H7DSH:LGWK4XDQWLW\ 6L’<·PPXQLWV ’LHDQGPDQXIDFWXULQJVRXUFHVXEMHFWWRFKDQJHZLWKRXWSULRUQRWLILFDWLRQ 1999 Si4532DY, Rev. C
