SI4559EY ,N/P-Channel 50-V (D-S) Pair FaxBack 408-970-5600S-57253—Rev. D, 24-Feb-982-1Si4559EYVishay Siliconix
SI4559EY
N/P-Channel 50-V (D-S) Pair
VISHAY
Si4559EY
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.055@Vss=10V $4.5
N-Channel 60
0.075 @sz= 4.5V 13,9
0.120@VGs=-101/ 13,1
P-Channel -60
0.150@VGs=-4.5V i2.8
Top View
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 60 -60
Gate-Source Voltage VGS d: 20 d: 20
TA=25°C i4.5 i3.1
Continuous Drain Current (To = 175°C)21 ID
TA-- 70°C $3.8 $26
Pulsed Drain Current IDM i 30 i 30
Continuous Source Current (Diode Conduction)" IS 2.0 -2.0
TA = 25°C 2.4
Maximum Power Dissipationa PD W
TA = 70°C 1.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P- Channel Unit
Maximum Junction-to-Ambient" RthJA 62.5 “CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70167
S-57253-Reu D, 24-Feb-98
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Si4559EY
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VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
V =V ,l =2500A N-Ch 1
Gate Threshold Voltage VGS(th) DS GS D V
VDs = VGs. ID = -250 WA P-Ch -1
N-Ch i 100
Gate-Body Leakage less VDS = 0 V, VGS = d: 20 V P Ch nA
- j: 100
VDS = 60 V, VGS = O V N-Ch 2
Vos = -60 V, VGS = 0 V P-Ch Al
Zero Gate Voltage Drain Current IDSS 11A
VDS = 60 V, VGS = O V, TJ = 55°C N-Ch 25
Vos = -60 V, VGs = 0 V, TJ = 55°C P-Ch -25
V 25V,V =10V N-Ch 20
On-State Drain Currentb IBM) DS GS A
Vos s -5 V, VGS = -10 V P-Ch -20
Vss = 10 V, ID = 4.5 A N-Ch 0.045 0.055
VGS=-10V, ID =-3.1 A P-Ch 0.100 0.120
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 4.5 V, ID = 3.9 A N-Ch 0.055 0.075
VGs=-4diV, ID=-2.8A P-Ch 0.125 0.150
VDS=15V, lro=4.5A N-Ch 13
Forward Transconductanceb gfs S
Vos = -15 V, ID = -3.1 A P-Ch 7.5
. ls = 2.0 A, VGS = 0 V N-Ch 0.9 1.2
Diode Forward Voltageb V30 V
ls = Al.0 A, Vcs = o v P-Ch Ah8 -1.2
Dynamica
N-Ch 19 30
Total Gate Charge Qg
N-Channel P-Ch 16 25
G t s Ch Q bbs-- 30V, VGS=10V,ID=4.5A N-Ch 4 C
a e- ource ar e n
g gs P-Channel P-Ch 4
Vos = -30 V, VGS = -10 v
. ID = -3.1A N-Ch 3
Gate-Drain Charge di
P-Ch 1.6
T O D I Ti t N-Ch 13 20
urn- n e a Ime
y d(on) P-Ch 8 15
N-Channel N-Ch 11 20
Rise Time tr VDD = 30 V, RL = 30 Q
lroc--1A,VGEN=10V,RG=6Q P-Ch 10 20
- N-Ch 36 60
Turn-Off Delay Time td(ott) VDD = f38h3‘nlgfl= 30 Q P Ch ns
Iroc---1A,N/sEN=-10V,Rs=6Q - 12 25
N-Ch 11 20
Fall Time tr
P-Ch 35 50
IF = 2 A, dildt = 100 Alps N-Ch 35 60
Source-Drain Reverse Recovery Time trr
IF = -2 A, di/dt = 100 A/gs P-Ch 60 90
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 us, duty cycle s 2%.
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Document Number: 70167
S-57253-Rev. D, 24-Feb-98
VISHAY Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
30 I I 30 I I f
VGS=1Othru5V Tc=-55l
24 24 I I
25°C 22 150''C
ig" 4V iii:.]
E 18 E 18
(i, 12 y (i, 12
6 2, 1 v 6 I
Nsul 3 V
o I o J
O 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.150 1400
0.125 1200
V E 1000
g 0.100 9,
jg ,i,i. 800
d? 0.075 VGS = 4.5 V t,'t:os, 600
I 0.050 _ I
"ic," VGS = 10 V 0 400
0.025 200
0 6 12 18 24 30 0 12 24 36 48 60
ID - Drain Current (A) VDs - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
2.2 I I I
Vos=30V VGs=10V w'''''
lro=4.5A ID=4.5A I
8 / /'"
/ 1.6 l/
s, 7,"
E 6 Jd 'jo', /''"
3 U) = l
o m m 1.3
cn 0: E
6 4 a a ,,,ps''''"
"i o a
Iii I 1.0
(D / e
8 2 g 0.7 l/
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 175
Qg - Total Gate Charge (nC) TJ-Junction Temperature CC)
Document Number: 70167 www.vishay.com . FaxBack 408-970-5600
S-57253-Reu D, 24-Feb-98
Si4559EY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.10
A 0.08
A 10 ct
E g 0.06 b = 4.5 A
0 E "ss..,.,
E a; "---,
(’8) OT 0.04
- 3 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "s,
"N, 40
-0 0 )
E ID = 250 pA 30 k
CO -0.2
E 's g \
> "sis,. it
ii 0 g 20
> -0.6 t N.
'ss 10 'ss
Ah8 \ "s,
-1.0 0
-50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
ii' g 0.2
.2 8 0.1
E I- 2
E 2. Per Unit Base = RthoA = 62.5“C/W
a 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
1O-4 Itr3 10-2 Itt-l 1 10 30
Square Wave Pulse Duration (sec)
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b4 S-57253-Rev. D, 24-Feb-98
VISHAY
Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
oij, 0.6
'il:] 0.2
Output Characteristics
l l l -
VGS=10,9,8,7,6V Al,,,,---
sg,,f, /
w"'" 5 v
we''''
1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS=4.5V VGS=1OV
_.....--""
4 8 12 16 20
ID - Drain Current (A)
Gate Charge
Vos = 30 v
ID = 3.1 A
4 8 12 16 20
% - Total Gate Charge (nC)
rDS(on) — 0n-Resistance( Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc---551
16 / 150°C
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Capacitance
0 10 2O 30 40 50 60
I/os - Drain-to-Source Voltage (V)
2 0 On-Resistance vs. Junction Temperature
. l l l
VGS = 10 V
ID=3.1A ',,,,w'''''
,,,,,,ps'''''
-50 -25 0 25 50 75 100 125 150 175
T: - Junction Temperature CC)
Document Number: 70167
S-57253-Reu D, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
Si4559EY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.5
10 a 0.4
Ci.". V
- - o 8
[c-o T J - 175 C fd 0.3
'i , 0 2 I ID = 3.1 A
(n ? . N,,
0.00 0.25 0.50 0.75 1.00 1.25 1.50 2 4 6 8 10
V39 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.75 50 Illlllll l
To = 25°C
Single Pulse
0 50 "
jji? ws''''
8 ',,,,,,p''''' g 30
"i'--,' 0.25 b - 250 HA 1 a
> s,,p'''" t N
g" n. 20
E "e'" y
"w''''''''' "ss,
-0.25 0
-50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
- Duty Cycle = 0.5
g g 0.2 Notes:
o TO ,
g E 0.1 DM
E a 0.1 t
T7 g -5 tl _
o ID - 12 -
.y = 1
'rrsr- 1.Duty Cycle,D= T
g 2. Per Unit Base = RNA = 62.5°C/W
a 3. Ta, - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 IO-s 10-2 IO-I 1 IO 30
Square Wave Pulse Duration (sec)
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