SI9806DY ,Dual Gate, N-Channel Enhancement-Mode MOSFET
SI9910DJ ,Adaptive Power MOSFET Driver1applications had to bethe driver will ignore a turn-on input signal. An undervoltageprovided. The ..
SI9910DY ,Adaptive Power MOSFET Driver1applications below 500 V. Total node capacitance defines thevalue of R4 needed to guarantee an inpu ..
SI9910DY ,Adaptive Power MOSFET Driver1PIN CONFIGURATIONS AND ORDERING INFORMATIONPDIP-8 SOIC-8V PULL-UP V PULL-UP1 8DS 1 8 DSINPUT Pull-D ..
SI9910DY-T1 ,Adaptive Power MOSFET Driver1applications with to limit shoot-through current during t (diode reverse recoveryrr“bootstrap” or “ ..
SI9910DY-T1 ,Adaptive Power MOSFET Driver1FEATURES dv/dt and di/dt Control t Shoot-Through Current Limiting Compatible with Wide Range o ..
SM3G45 ,BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONSAPPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : V = 400, 600V DRM R.M.S ON−State Cu ..
SM3GZ47 ,BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONSAPPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : V = 400, 600V DRM R.M.S ON−State Cu ..
SM3JZ47 ,BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONSAPPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : V = 400, 600V DRM R.M.S ON−State Cu ..
SM3JZ47 ,BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONSSM3GZ47,SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47,SM3JZ47 AC PO ..
SM4001A , Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers
SM4001A , Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers
SI9806DY
Dual Gate, N-Channel Enhancement-Mode MOSFET
Si9806DY
Vishay Siliconix
VISHAY
Dual Gate, N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.027@VGS=4.5V i7.0
0.038 @ VGS = 3.0 v $6.0
0.400@VGS=4.5V $1.8
Gate 2
0.570@VGS= 3.0V i1.5
D G1 o-i
D G2 o-l
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Gate 1 Gate 2 Unit
Drain-Source Voltage Vos 25
Gate-Source Voltage VGs l 12
TA=25°C $7.0 i1.8
Continuous Drain Current (TJ = 150°c)a ID
TA=70°C $5.7 i1.5 A
Pulsed Drain Current IDM l 40 i: 4.0
Continuous Source Current (Diode Conduction)" Is 2.1
TA = 25°C 2.5
Maximum Power Dissipation" PD W
TA = 70°C 1.0
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Gate 1 or Gate 2 Unit
Maximum Junction-to-Ambient" RthJA 50 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70771 www.siliconix.com . FaxBack 408-970-5600
S-00652-Reu C, 27-Mar-00 1
Si9806DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSW VDS = VGs, ID = 250 WA 0.6 V
Gate-Body Leakage IGSS Vos = 0 V, VGS = i12 V i 100 nA
Vos=25V,Vss--0V 1
Zero Gate Voltage Drain Current IDSS WA
VDs=25V,Vss=0V,To=55''C 5
On-State Drain Currenta low") (G1 = G2) VDS = 5 V, VGs = 4.5 V 40 A
(G1: G2) VGS = 4.5 V, ID = 7.0 A 0.021 0.027
rDS1 on
( ) (G1 = G2) VGS = 3.0 V, ID = 6.0 A 0.028 0.038
Drain-Source On-State Resistancea Q
VG1S = 0 V, Kass = 4.5 V, ID = 1.8 A 0.265 0.400
rDS2(on)
V613 = o v, VGZS = 3.0 v, ID = 0.3 A 0.340 0.570
Forward Transconductancea gfs Vos = 10 V, ID = 7.0 A 25 S
Diode Forward Voltagea VSD ls = 2.1 A, VGS = 0 V 0.71 1.1
Dynamicb
Gate 1 14 20
Total Gate Charge Qg Gate 1
Vros=10V, VGS(1,2)=4-5V Gate2 1.2 2.5
ID = 7.0 A
Gate 1 4.2
Gate-Source Charge Qgs nC
Gate 2 0.3
Gate 2
VDS = 10 V, VGS(1) = 0 V, VGS(2) = 4.5 Gate1 2.4
Gate-Drain Charge di , k, = 1.8 A
Gate 2 0.3
Turn-On Delay Time td(on) 23 40
Rise Time tr vDD = 10 v, RL = 10 Q 30 60
Turn-Ott Delay Time tam) ID E 1 A, VGEN = 4.5 V, RG = 6 Q 46 90 ns
Fall Time tf 18 30
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 Alps 60 120
a. Pulse test; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.siliconix.com . FaxBack 408-970-5600 Document Number: 70771
2 S-00652-Rev. C, 27-Mar-00
VISHAY
Si9806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
V 0.05
E 0.04
t 0.03
"ii,' 0.02
a: 2.7
5.2 1.8
U, 0.9
Output Characteristics
Qg - Total Gate Charge (nC)
/''' I/ss = 5thru 3 v
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vss = 3 v s.,,,,,,,,.,,---"'"
_.--"'
VGS = 4.5 V
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
Vros = 10 v
- ID = 7 A //
0 3 6 9 12 15
I’DS(on) — On-Resistance( Q )
I D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = 125"C gf
25°C \///
I f, j) -55''C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Capacitance
2500 Ciss
2000 's;
'ssf'ss
1000 '_--,
500 Crss
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l/ss = 4.5 V
lro=7A /
o,,,,.,,,,,,--'''"'"
s,,,,.,.-''''"'"
0 50 100 150
To - Junction Temperature (°C)
Document Number: 70771
S-00652-Reu C, 27-Mar-00
www.siliconix.com . FaxBack 408-970-5600
Si9806DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A a 0.06
tC.. V
t T J = 15000 Ea'
8 g 0.04
f' E 0.02 ID - 7 A a''.--,
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8
VsD - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 100
0.2 Arc \
's. ID = 250 0A
"s, 60
-0.4 "ssc 40 N
'ss,, 20
VGS(th) Variance (V)
Power (W)
-0.8 0
-50 0 50 100 150 0.01 0.1 1 10 30
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
- Duty Cycle = 0.5
E 8 0.2
tg,' I', Notes:
2' E T
E E 0.1 PDM
.5 = " F-
E _ -ly-1 t2 t
g 1. Duty Cycle, D = il,
a 2. Per Unit Base = RNA = 50°CNV
- = (t)
Single Pulse 3. TJM TA PDMZWA
4. Surface Mounted
IO-d 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
www.siliconix.com . FaxBack 408-970-5600 Document Number: 70771
4 S-00652-Rev. C, 27-Mar-00
VISHAY Si9806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics On-Resistance vs. Drain Current
/ VGS = 5 thru 3.5 v
E 3 3 v fi.
9 --- .2
o Y'''" n:
I 2.5 v E"
0 2 4 6 8 10 0 0.8 1.6 2.4 3.2 4.0
VDs - Drain-to-Source Voltage (V) ID - Drain Current (A)
4 5 Gate Charge On-Resistance vs. Gate-to-Source Voltage
g 3.6 A 0.8
g Vros = 10 v pr g
53 ID = 1.8 A V
m 2.7 fi, 0.6
f?, d? ( ID = 1.8 A
Sl 1.8 C
d: o 0.4 Ns,,
lis' I
w os g 0.2
0 0.3 0.6 0.9 1.2 o 2 4 6 8
Q9 - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V)
Document Number: 70771 www.siliconix.com . FaxBack 408-970-5600
S-00652-Reu C, 27-Mar-00 5
:
www.loq.com
.
