SPB10N10 ,N-Channel SIPMOS Power TransistorFeatureV 100 VDS• N-ChannelR 180 mΩDS(on)• Enhancement modeI 10.3 AD•=175°C operating temperatureP- ..
SPB10N10L ,Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LLFeatureV100 VDS
SPB10N10
N-Channel SIPMOS Power Transistor
SPI10N10
SPP10N10,SPB10N10Target data sheet
SIPMOS
=Power-Transistor
Product Summary
Feature• N-Channel
• Enhancement mode
•=175°C operating temperature
• Avalanche rated
• dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
SPI10N10
SPP10N10,SPB10N10Target data sheet
Thermal Characteristics
Characteristics
Static Characteristics
SPI10N10
SPP10N10,SPB10N10Target data sheet
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPI10N10
SPP10N10,SPB10N10Target data sheet
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© Infineon Technologies AG 1999
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For information on the types in question please contact your nearest Infineon Technologies Office.
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