SPD07N20 ,Low Voltage MOSFETsFeaturesDrain source voltage 200 VVDS• N channelDrain-Source on-state resistance 0.4R Ω• Enhancemen ..
SPD07N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyVV 600DS• Worldwide best R in TO-2 ..
SPD07N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Worldwide best R in TO-251 ..
SPD07N60S5 ,for lowest Conduction LossesFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Worldwide best R in TO-251 ..
SPD08N05L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.1R Ω• Enhancement ..
SPD08N10 ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 100 VV• N channel DSDrain-Source on-state resistance 0.3R Ω• Enhanceme ..
SST39VF800A-70-4C-M1Q , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4C-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3K , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-B3KE-T , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF800A-70-4I-M1QE , 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SPD07N20
Low Voltage MOSFETs
Infineon
technologies
Preliminary Data
SIPMOS® Power Transistor SPD 07N20
Features Product Summary
. N channel Drain source voltage VDS 200 V
. Enhancement mode Drain-Source on-state resistance RDSW) 0.4 Q
. Avalanche rated Continuous drain current h, 7 A
o d v/dt rated
VPTO9051
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPDO7N20 P-TO252 Q67040-S4120-A2 Tape and Reel G D s
SPU07N20 P-T0251 Q67040-S4112-A2 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current k, A
TC = 25 ( 7
TC = 100 ( 4.5
Pulsed drain current IDpuIse 28
TC = 25 °C
Avalanche energy, single pulse EAS 120 mJ
ID=7A, VDD=50V, RGS=25£2
Avalanche energy, periodic limited by Tmax EAR
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 7 A, VDS = 160 V, di/dt= 200 Alps,
ijax = 175 (
Gate source voltage VGS I-20 V
Power dissipation Ptot 40 W
TC = 25 ''C
Operating and storage temperature TI , Tstq -55... +175 "C
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
Infineon SPD 07N20
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 3.1 K/W
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 200 - - V
VGS = 0 V, ho = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 4
ID = 1 mA
Zero gate voltage drain current IDSS pA
VDS=200V, VGS=0V, 7]=25°C - 0.1 1
VDS=200V, VGS=0V, Tj=125°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 10 V, ID = 4.5 A - 0.3 0.4
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
