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SPI80N03S2-03
Low Voltage MOSFETs
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
OptiMOSâ Buck converter series
Product Summary
Feature· N-Channel
· Enhancement mode
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
P- TO263 -3-2P- TO262 -3-1P- TO220 -3-1
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 mm thick) copper area for
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
1 Power dissipationtot = f (TC)
40
80
120
160
200
240
320 SPP80N03S2-03
tot
2 Drain currentD = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90
SPP80N03S2-03
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
SPP80N03S2-03
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190
SPP80N03S2-03
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
12
SPP80N03S2-03
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
40
80
120
160
200
240
320
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
120
140
180
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
8.5 SPP80N03S2-03
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
SPP80N03S2-03
