SSP45N20B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 35A, 200V, R = 0.065Ω @V = 10 VDS(on) ..
SSP4N60B ,600V N-Channel MOSFETSSP4N60B/SSS4N60BSSP4N60B/SSS4N60B600V N-Channel MOSFET
SSP4N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 4.0A, 600V, R = 2.5Ω @V = 10 VDS(on) ..
SSP4N70 , N-CHANNEL POWER MOSFETS
SSP5N80A , Advanced Power MOSFET
SSP5N80A , Advanced Power MOSFET
STC5NF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STC5NF30V ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STC6344S , UP Supervisor Circuits
STC6NF30V ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)jOFFSymbol Parameter Test Conditio ..
STC89C54RD , STC12C5410AD
STC918E , NPN Silicon Transistor
SSP45N20B
200V N-Channel MOSFET
SSP45N20B/SSS45N20B November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 35A, 200V, R = 0.065Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 133 nC) planar, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S SSP Series SSS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSP45N20B SSS45N20B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 35 35 * A D C - Continuous (T = 100°C) 22.2 22.2 * A C I (Note 1) Drain Current - Pulsed 140 140 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) 35 A AR E (Note 1) Repetitive Avalanche Energy 17.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 176 57 W D C - Derate above 25°C 1.41 0.45 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter SSP45N20B SSS45N20B Units R Thermal Resistance, Junction-to-Case Max. 0.71 2.2 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
