STB200NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF04 ,N-CHANNEL 40VFeatures Figure 1: PackageType V R I PwDSS DS(on) DSTB200NF04 40 V < 0.0037 Ω 120 A 310 WSTB200NF04 ..
STB200NF04T4 ,N-CHANNEL 40VAbsolute Maximum ratings Symbol Parameter Value UnitV Drain-source Voltage (V = 0) 40 VDS GSV Drai ..
STB20NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB20NK50Z-S ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB20NK50ZT4 ,N-CHANNEL 500VSTP20NK50Z - STW20NK50ZSTB20NK50Z - STB20NK50Z-S2 2N-CHANNEL 500V -0.23Ω - 17A TO-220/D PAK/I SPAK/ ..
STV0288 ,DVB-S and DIRECTV QPSK receiver with autoscan featureapplications.converters for I-input and Q-input, a QPSKdemodulator, and a forward error correction ..
STV0297E ,QAM demodulator IC with A/D converterFeatures■ Decodes ITU-T J.83-Annexes A/Cand DVB-C bit streams ■ Processes Japanese transport stream ..
STV0297J ,UNIVERSAL DIGITAL CABLE DEMODULATOR STV0297J® STV0297JUniversal digital cable demodulatorDATA BRIEFDescriptionThe STV0297J is a highly integrat ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC
STB200NF03T4
N-CHANNEL 30V
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AUTOMOTIVE SPECIFICOctober 2002
STP200NF03
STB200NF03 STB200NF03-1N-CHANNEL 30V - 0.0032 Ω - 120A D² PAK/I² PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0032Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤120A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V
STB200NF03/-1 STP200NF03
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
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STB200NF03/-1 STP200NF03SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB200NF03/-1 STP200NF03Output Characteristics Transfer Characteristics
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STB200NF03/-1 STP200NF03Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
STB200NF03/-1 STP200NF03
Allowable Iav vs. Time in AvalancheThermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
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