STB8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB8NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB8NA50 500 V < ..
STB8NC70Z-1 ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB8NM60T4 ,N-CHANNEL 650V@TjmaxAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 IPAKTO-220FPD²PAK DPAKV Gate-source voltag ..
STB90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB90NF03LT4 ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STV2286 ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORapplications■ Two Horizontal Deflection PLLs■ Vertical Countdown■ Half Contrast■ APR (Automatic RGB ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1
STV2310 ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb Input® ST STV23 V231 10 0Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb I ..
STV2310D ,Multistandard TV Digital Video Decoderwith Adaptive Comb Filter and RGB/YCrCb InputFEATURES■ Worldwide TV Standards Compatible■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder■ NTSC/ ..
STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STB8NA50
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STB8NA50N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
October 1995
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STB8NA502/10
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STB8NA503/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STB8NA504/10
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STB8NA505/10
Switching Safe Operating Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test CircuitAccidental Overload Area
Fig. 2: Unclamped Inductive Waveform
STB8NA506/10
