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STBV68
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STBV68HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS: ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STBV68 is designed for use in compact
fluorescent lamp application.
September 2000
ABSOLUTE MAXIMUM RATINGS1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
STBV682/4
STBV683/4
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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STBV684/4
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