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STC03DE170
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
1/9October 2004
Table 1: General Features LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.7 W
APPLICATION AUX SMPS FOR THREE PHASE MAINS
DESCRIPTION The STC03DE170 is manufactured in a hybridstructure, using dedicated high voltage Bipolarand low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.The STC03DE170 is designed for use in auxflyback smps for any three phase application.
Table 2: Order Code
STC03DE170HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORESBT™ 1700 V - 3 A - 0.55 W
Rev. 2
STC03DE1702/9
Table 3: Absolute Maximum Ratings
Table 4: Thermal Data
Table 5: Electrical Characteristics (Tcase = 25 o C unless otherwise specified)
STC03DE1703/9
STC03DE1704/9
Figure 3: Safe Operating Area
Figure 4: Reverse Biased Safe Operating Area
Figure 5: DC Current Gain
Figure 6: Output Characteristics
Figure 7: Gate Threshold Voltage vs Tempera-ture
Figure 8: DC Current Gain
STC03DE1705/9
Figure 9: Collector-Source On Voltage
Figure 10: Base-Source On Voltage
Figure 11: Inductive Load Switching Time
Figure 12: Collector-Source On Voltage
Figure 13: Base-Source On Voltage
Figure 14: Inductive Load Switching Time
STC03DE1706/9
Figure 15: Dynamic Collector-Emitter Satura-tion Voltage
Figure 16: Inductive Load Enlargement FBSOA Circuit
Table 6: Components, Values
