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STD150N3LLH6STN/a20avaiN-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET


STD150N3LLH6 ,N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
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STD150N3LLH6
N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET

September 2009 Doc ID 15227 Rev 3 1/16
STD150N3LLH6STP150N3LLH6, STU150N3LLH6

N-channel 30 V , 0.0024 Ω , 80 A, DP AK, IP AK, TO-220 ripFET™ VI DeepGA TE™ Power MOSFET
Features
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
Application
Switching applications
Description

This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Figure 1. Internal schematic diagram


Table 1. Device summary

Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6

2/16 Doc ID 15227 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical ratings
Doc ID 15227 Rev 3 3/16

1 Electrical ratings
Table 2. Absolute maximum ratings
Limited by wire bonding Pulse width limited by safe operating area Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Table 3. Thermal resistance

Electrical characteristics STD150N3LLH6, STP150N3LLH6, STU150N3LLH6

4/16 Doc ID 15227 Rev 3
2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical characteristics
Doc ID 15227 Rev 3 5/16

Table 6. Switching on/off (inductive load)
Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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