STP6NB25FP ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NB25 STP6NB25FPV Drain-source Voltage (V = 0 ..
STP6NB50 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP6NB50STP6NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP6NB50 500 ..
STP6NB50FP ,NSTP6NB50STP6NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP6NB50 500 ..
STP6NB80 ,N-CHANNEL 800VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP6NB80FP ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NB80 STP6NB80FPV Drain-source Voltage (V = 0 ..
STP6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP6NB25FP
N-CHANNEL 250V
1/9May 2001
STP6NB25
STP6NB25FPN-CHANNEL 250V - 0.9Ω - 5A TO-220/TO-220FP
PowerMesh™ MOSFET TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC-DC & DC-AC CONVERTERS FOR
TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤5A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
STP6NB25/FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
DYNAMIC
3/9
STP6NB25/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP6NB25/FP
Thermal Impedence for TO-220
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
5/9
STP6NB25/FP
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STP6NB25/FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
