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STS12NF30LSTMN/a1167avaiN-CHANNEL 30V


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STS12NF30L
N-CHANNEL 30V
1/8October 2001
STS12NF30L

N-CHANNEL 30V - 0.008 Ω - 12A SO-8
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.008 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS12NF30L
THERMAL DATA

(*) When mounted on Fr-4 board with 0.5 in2 of Cu
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/8
STS12NF30L

SWITCHING ON
SWITCHING OFF (*)
SOURCE DRAIN DIODE
(*) Pulse width [ 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS12NF30L
Output Characteristics
5/8
STS12NF30L

Normalized Gate Threshold Voltage vs Temperature .
STS12NF30L
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive

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