STS3C3F30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS3DNE60L ,DUAL N-CHANNEL 60VSTS3DNE60L®N - CHANNEL 60V - 0.065W - 3A SO-8STripFET
STS3C3F30L
N-CHANNEL 30V
N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8
P-CHANNEL 30V - 0.140 Ω - 3A SO-8
STripFET™ II POWER MOSFET
1/10February 2002
STS3C3F30L TYPICAL RDS(on) (N-Channel) = 50 mΩ TYPICAL RDS(on) (P-Channel) = 140 mΩ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS DC/DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STS3C3F30L
THERMAL DATA(1) when mounted on 0.5 in2 pad of 2 oz. copper
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
DYNAMIC
3/10
STS3C3F30LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(•) Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS3C3F30LSafe Operating Area n-ch
5/10
STS3C3F30LGate Charge vs Gate-source Voltage n-ch Capacitance Variations n-ch
STS3C3F30LSafe Operating Area p-ch
