STS4DNF60L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4DNFS30 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive Peak Reverse Voltage 30 VRRMI RMS F ..
STS4DNFS30 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DNFS30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DNF-S30L ,N-CHANNEL 30VSTS4DNFS30LN-CHANNEL 30V - 0.044Ω - 4A SO-8STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIERMAIN PRODUCT ..
STS4DPF20L ,DUAL P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
T520D157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS4DNF60L
N-CHANNEL 60V
1/8June 2001
STS4DNF60LN-CHANNEL 60V - 0.045 Ω - 4A SO-8
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS4DNF60LTHERMAL DATA
(*) Mounted on FR-4 board (t [ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/8
STS4DNF60LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS4DNF60L Capacitance Variations
5/8
STS4DNF60LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS4DNF60L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
