STS8NF30L ,N-CHANNEL 30VSTS8NF30L®N - CHANNEL 30V - 0.018Ω - 8A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS8NF30L ..
STS9014 , NPN Silicon Transistor
STS9018 , NPN Silicon Transistor
STS9NF30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS9NH3LL , N-channel 30V - 0.018ohm - 9A - SO-8 Low gate charge STripFET TM III Power MOSFET
STSA1805 ,LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTSA1805®LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Marking PackageCode ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STS8NF30L
N-CHANNEL 30V
STS8NF30LN - CHANNEL 30V - 0.018Ω - 8A SO-8
STripFET POWER MOSFET TYPICAL RDS(on) = 0.018 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
December 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/8
THERMAL DATA(*) Mounted on FR-4 board (Steady State)
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STS8NF30L2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STS8NF30L3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STS8NF30L4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STS8NF30L5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STS8NF30L6/8
