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STT13005D
High voltage fast-switching NPN power transistor
November 2009 Doc ID 14897 Rev 2 1/10
STT13005DHigh voltage fast-switching NPN power transistor
Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed
Applications Electronic ballast for fluorescent lighting Flyback and forward single transistor low
power converters
DescriptionThe device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Figure 1. Internal schematic diagram
Table 1. Device summary
Electrical ratings STT13005D2/10 Doc ID 14897 Rev 2
1 Electrical ratings
Table 2. Absolute maximum ratings
Table 3. Thermal data
STT13005D Electrical characteristicsDoc ID 14897 Rev 2 3/10
2 Electrical characteristicsTcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristics STT13005D4/10 Doc ID 14897 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain (VCE = 1 V) Figure 5. DC current gain (VCE = 5 V)
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
STT13005D Electrical characteristicsDoc ID 14897 Rev 2 5/10
Figure 8. Inductive load fall time Figure 9. Inductive load storage tim
Figure 12. Reverse biased SOA Electrical characteristics STT13005D6/10 Doc ID 14897 Rev 2
2.2 Test circuits
Figure 13. Resistive load switching test circuit Fast electronic switch Non-inductive resistor
Figure 14. Inductive load switching test circuit Fast electronic switch Non-inductive resistor Fast recovery rectifier
