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TK100F04K3LToshibaN/a30000avaiPower MOSFET (N-ch single 30V<VDSS≤60V)


TK100F04K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK100F06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristics Symbol MaxUnit 1 Thermal resistance, channel to case R 0.83 ..
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TLP250(D4) ,Photocoupler
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..
TLP250F ,Photocoupler GaAlAs IRed & Photo-ICTLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TENTATIVE TLP250F Unit in mmTransistor Inv ..


TK100F04K3L
Power MOSFET (N-ch single 30V<VDSS≤60V)
TK100F04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK100F04K3LTK100F04K3LTK100F04K3LTK100F04K3L
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators DC-DC Converters Motor Drivers
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
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