TPC6002 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Notebook PC Applications Portable Equipment Applications
TPC6002 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Notebook PC Applications Portable Equipment Applications
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TPC6002
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Notebook PC Applications Portable Equipment Applications
TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6002 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration 6 4
1 2 3
Marking (Note 5)
