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TPC8208ToshibaN/a3000avaiField Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs


TPC8208 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCsTPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium I ..
TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsApplications  Small footprint due to small and thin package  Low drain−source ON resistance: ..
TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsApplications Unit: mmPortable Equipment
TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsTPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium I ..
TPC8210 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
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TPC8208
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8208

Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta �
�� � 25°C) Tstg
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
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