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U5196NL-U5197NL-U5198NL-U5199NL Fast Delivery,Good Price
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U5196NLVishayN/a142avaiMonolithic N-Channel JFET Duals
U5197NLVishayN/a157avaiMonolithic N-Channel JFET Duals
U5198NLVishayN/a36avaiMonolithic N-Channel JFET Duals
U5199NLVishayN/a32avaiMonolithic N-Channel JFET Duals


U5197NL ,Monolithic N-Channel JFET DualsS-03468—Rev. B, 11-Mar-037-1SST/U5196NL SeriesNew ProductVishay SiliconixSPECIFICATIONS FOR U5196NL ..
U5198NL ,Monolithic N-Channel JFET DualsS-03468—Rev. B, 11-Mar-037-3g - Forward Transconductance (mS)fsSST/U5196NL SeriesNew ProductVishay ..
U5199NL ,Monolithic N-Channel JFET DualsS-03468—Rev. B, 11-Mar-037-4I - Drain Current (mA) I - Drain Current (mA)D I - Saturation Drain Cur ..
U5545NL ,Monolithic N-Channel JFET DualsS-03162—Rev. A, 14-Feb-037-1SST/U5545NL SeriesNew ProductVishay SiliconixSPECIFICATIONS (T = 25C U ..
U5546NL ,Monolithic N-Channel JFET DualsS-03162—Rev. A, 14-Feb-037-2g - Forward Transconductance (mS)fsSST/U5545NL SeriesNew ProductVishay ..
U5547NL ,Monolithic N-Channel JFET DualsS-03162—Rev. A, 14-Feb-037-4 V - VGS1 GS2A - Voltage Gain I - Drain Current (mA)V() V/C D tr - ..
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UCC5640PW , LOW VOLTAGE DIFFERENTIAL (LVD) SCSI 9-LINE TERMINATOR
UCC5640PW , LOW VOLTAGE DIFFERENTIAL (LVD) SCSI 9-LINE TERMINATOR


U5196NL-U5197NL-U5198NL-U5199NL
Monolithic N-Channel JFET Duals
SST/U5196NL Series
Vishay SiliconixNew Product
Monolithic N-Channel JFET Duals
SST5198NLSST5199NL U5196NLU5197NL U5198NLU5199NL

FEATURES BENEFITS APPLICATIONS Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB External Substrate Bias—Avoids Latchup Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed, Temp-Compensated,Single-Ended Input Amps High Speed Comparators Impedance Converters
DESCRIPTION
The SST/U5196NL series of JFET duals are designed for
high-performance differential amplification for a wide range ofprecision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,and wide dynamic range with IG guaranteed at VDG = 20 V.
Pins 4 and 8 of the SST series and pin 4 on the U series partnumbers enable the substrate to be connected to a positive,
external bias (VDD) to avoid latchup.
The U series in the hermetically-sealed TO-78 package is
available with full military processing. The SST series SO-8package provides ease of manufacturing and the symmetrical
pinout prevents improper orientation. The SO-8 package isavailable with tape-and-reel options for compatibility with
automatic assembly methods.
For similar products see the low-noise SST/U401NL seriesand the low-leakage U421NL/423NL data sheets.
TO-78

CASE, SUBSTRATE
TO-78

Top View U5196NL, U5198NLU5197NL, U5199NL
CASE, SUBSTRATE SUBSTRATE G2 D2
SUBSTRATE S2
Narrow Body SOIC

Top View
Marking Codes:
SST5198NL - 5198NLSST5199NL - 5199NL
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage -50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea 250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
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