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UNR3213PANASONICN/a1447avaiSilicon NPN epitaxial planar transistor


UNR3213 ,Silicon NPN epitaxial planar transistorElectrical Characteristics (continued) T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit ..
UNR32A3 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR5110 ,Composite DeviceTransistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUn ..
UNR5112G ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR5113 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UNR5116 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
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UNR3213

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