UNR911AG ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR911NJ ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UNR911TJ ,Composite DeviceTransistors with built-in ResistorUNR911xJ Series (UN911xJ Series)Silicon PNP epitaxial planar type ..
UNR9211J ,Composite DeviceTransistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer type ..
UNR9212J ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UNR9215J ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UPD42S18165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000AGU-70LL-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-70LL-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-A10-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UNR911AG
