UNR92A1J ,Silicon NPN epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
UP0.4C-150-R , Miniature size and rugged construction
UP04113 ,Composite DeviceAbsolute Maximum Ratings T = 25°Ca3: Collector (Tr2) 6: Collector (Tr1)SSMini6-F1 PackageParameter ..
UP04113 ,Composite DeviceComposite TransistorsUP0411x SeriesSilicon PNP epitaxial planar typeUnit: mm+0.050.20(0.30) 0.10±0. ..
UP04116 ,Composite DeviceFeatures• Two elements incorporated into one package5˚123(Transistors with built-in resistor)(0.50) ..
UP04211 ,Composite DeviceAbsolute Maximum Ratings T = 25°Ca6 5 4Parameter Symbol Rating UnitRR1 2Collector-base voltage (Em ..
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000AGU-70LL-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-70LL-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-A10-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UPD431000AGU-A10-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UPD431000AGU-A12-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
UNR92A1J
