UPA1708 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected)CHARACTERISTICS SYMBOL TEST COND ..
UPA1708G-E1 ,Nch enhancement type power MOS FETFEATURES• Low on-resistance6.0 ±0.3RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)144.4RDS(on)2 ..
UPA1708G-E2 ,Nch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected)CHARACTERISTICS SYMBOL TEST COND ..
UPA1709 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1709G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES PACKAGE DRAWING (Unit : mm)• Low on-resistance85RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = ..
UPA1709G-E1 ,Nch enhancement type power MOS FETFEATURES PACKAGE DRAWING (Unit : mm)85• Low on-resistanceRDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = ..
UPD444012AGY-B70X-MJH ,4M-bit(256K-word x 16-bit) Low Power SRAMDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD444012A-X4M-BIT CMOS STATIC RAM256K-WORD BY 16-BITEXTENDED ..
UPD444016G5-12Y-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMFeatures• 262,144 words by 16 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Byte data ..
UPD444016LE-12 ,4M-bit(256K-word x 16-bit) Fast SRAMFeatures• 262,144 words by 16 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Byte data ..
UPD444016LG5-A12-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD444016L4M-BIT CMOS FAST SRAM256K-WORD BY 16-BITDescriptio ..
UPD444016LG5-A12Y-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMPin Configuration (Marking Side)/××× indicates active low signal.44-PIN PLASTIC TSOP (II) (10.16 m ..
UPD444016LG5-A8-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMFeatures• 262,144 words by 16 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Byte data ..
UPA1708
