UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
UPG132G ,L-BAND DPDT MMIC SWITCHDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG132Gμ μL-BAND SPDT SWITCHDESCRIPTIONμPG132G is an L-Band ..
VN340SPTR-E ,Quad high side smart power solid state relayElectrical characteristics . . . . . 54 Test circuits 75 Switching time waveforms and tr ..
VN3515L ,N-Channel Enhancement-Mode Vertical DMOS FETsS-—Rev. D, 20–Nov-0011-3I – Drain Current (mA) I – Drain Current (mA)r – Drain-Source On-Resistance ..
VN3515L ,N-Channel Enhancement-Mode Vertical DMOS FETsVN3515L/VN4012LVishay SiliconixN-Channel 350- and 400-V (D-S) MOSFETs Part Number V Min ..
VN4012L ,N-Channel Enhancement-Mode Vertical DMOS FETsS-—Rev. D, 20–Nov-0011-2VN3515L/VN4012LVishay Siliconix ..
VN410 , SMART DIRECTION INDICATOR 2 CHANNEL DRIVERS
VN450 ,THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY
UPG101B
