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15.625ms

2SC1675

NPN Plastic Encapsulated Transistor

Partnumber Manufacturer Quantity Availability
2SC1675 20 In Stock

Description and Introduction

NPN Plastic Encapsulated Transistor The 2SC1675 is a high-frequency transistor manufactured by Toshiba. It is designed for use in RF amplification and oscillation applications. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 20V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 200mW
- **Transition Frequency (fT)**: 600MHz
- **Noise Figure (NF)**: 1.5dB (typical at 100MHz)
- **Gain-Bandwidth Product (fT)**: 600MHz
- **Package**: TO-92

These specifications are typical for the 2SC1675 transistor and are intended for use in high-frequency circuits.

Partnumber Manufacturer Quantity Availability
2SC1675 TOS 5732 In Stock

Description and Introduction

NPN Plastic Encapsulated Transistor The 2SC1675 is a high-frequency transistor manufactured by Toshiba. It is designed for use in RF amplifier applications. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Emitter Voltage (VCEO)**: 30V
- **Collector-Base Voltage (VCBO)**: 40V
- **Emitter-Base Voltage (VEBO)**: 4V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 200mW
- **Transition Frequency (fT)**: 600MHz
- **Noise Figure (NF)**: 1.5dB (typical at 100MHz)
- **Gain-Bandwidth Product (fT)**: 600MHz
- **Package**: TO-92

These specifications are typical for the 2SC1675 transistor as provided by Toshiba.

Partnumber Manufacturer Quantity Availability
2SC1675 NEC 1000 In Stock

Description and Introduction

NPN Plastic Encapsulated Transistor The 2SC1675 is a high-frequency transistor manufactured by NEC. It is designed for use in RF amplification and oscillation applications. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 300mW
- **Transition Frequency (fT)**: 600MHz
- **Noise Figure (NF)**: 3.5dB (typical at 100MHz)
- **Gain-Bandwidth Product (fT)**: 600MHz
- **Package**: TO-92

These specifications are typical for the 2SC1675 transistor as provided by NEC.

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