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2SJ220 from Hitach

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2SJ220

Manufacturer: Hitach

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Partnumber Manufacturer Quantity Availability
2SJ220 Hitach 3000 In Stock

Description and Introduction

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING The 2SJ220 is a P-channel MOSFET manufactured by Hitachi. Here are the key specifications:

- **Drain-Source Voltage (Vds):** -60V
- **Gate-Source Voltage (Vgs):** ±20V
- **Drain Current (Id):** -7A
- **Power Dissipation (Pd):** 30W
- **On-Resistance (Rds(on)):** 0.55Ω (typical) at Vgs = -10V, Id = -4A
- **Gate Threshold Voltage (Vth):** -2V to -4V
- **Input Capacitance (Ciss):** 600pF (typical)
- **Output Capacitance (Coss):** 200pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 10ns (typical)
- **Turn-Off Delay Time (td(off)):** 50ns (typical)
- **Operating Junction Temperature (Tj):** -55°C to 150°C

These specifications are based on the datasheet provided by Hitachi for the 2SJ220 MOSFET.

Partnumber Manufacturer Quantity Availability
2SJ220 HIT 200 In Stock

Description and Introduction

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING The 2SJ220 is a P-channel MOSFET manufactured by Hitachi (HIT). Here are the key specifications:

- **Drain-Source Voltage (Vds):** -60V
- **Gate-Source Voltage (Vgs):** ±20V
- **Drain Current (Id):** -8A
- **Power Dissipation (Pd):** 30W
- **On-Resistance (Rds(on)):** 0.3Ω (typical) at Vgs = -10V, Id = -4A
- **Gate Threshold Voltage (Vgs(th)):** -1V to -3V
- **Input Capacitance (Ciss):** 500pF (typical)
- **Output Capacitance (Coss):** 150pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Operating Junction Temperature (Tj):** -55°C to 150°C

These specifications are based on the typical characteristics provided by Hitachi for the 2SJ220 MOSFET.

Partnumber Manufacturer Quantity Availability
2SJ220 HITACHI 320 In Stock

Description and Introduction

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING The 2SJ220 is a P-channel MOSFET manufactured by HITACHI. Key specifications include:

- **Drain-Source Voltage (Vds):** -60V
- **Gate-Source Voltage (Vgs):** ±20V
- **Drain Current (Id):** -8A
- **Power Dissipation (Pd):** 30W
- **On-Resistance (Rds(on)):** 0.3Ω (typical) at Vgs = -10V
- **Gate Threshold Voltage (Vth):** -1V to -3V
- **Input Capacitance (Ciss):** 600pF (typical)
- **Operating Temperature Range:** -55°C to 150°C

These specifications are based on standard operating conditions. For detailed performance characteristics, refer to the official datasheet provided by HITACHI.

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