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2SK2688-01L from FUJI

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2SK2688-01L

Manufacturer: FUJI

N-CHANNEL SILICON POWER MOSFET

Partnumber Manufacturer Quantity Availability
2SK2688-01L,2SK268801L FUJI 84 In Stock

Description and Introduction

N-CHANNEL SILICON POWER MOSFET The part 2SK2688-01L is a power MOSFET manufactured by FUJI. It is designed for high-speed switching applications and is commonly used in power supply circuits, motor control, and other high-efficiency power conversion systems. The key specifications of the 2SK2688-01L include:

- **Drain-Source Voltage (Vds):** 500V
- **Drain Current (Id):** 10A
- **Power Dissipation (Pd):** 50W
- **Gate-Source Voltage (Vgs):** ±20V
- **On-Resistance (Rds(on)):** 0.45Ω (typical)
- **Input Capacitance (Ciss):** 1200pF (typical)
- **Output Capacitance (Coss):** 300pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 20ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Rise Time (tr):** 30ns (typical)
- **Fall Time (tf):** 20ns (typical)

The MOSFET is packaged in a TO-220F form factor, which is a common through-hole package for power devices. It is designed to handle high voltage and current levels while maintaining low on-resistance and fast switching speeds, making it suitable for high-efficiency applications.

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