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2SK932-22-TB-E from SAYNO

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2SK932-22-TB-E

Manufacturer: SAYNO

High-Frequency Low-Noise Amplifi er Applications

Partnumber Manufacturer Quantity Availability
2SK932-22-TB-E,2SK93222TBE SAYNO 3000 In Stock

Description and Introduction

High-Frequency Low-Noise Amplifi er Applications The **2SK932-22-TB-E** is a high-performance N-channel MOSFET designed for efficient power management and switching applications. This electronic component is widely used in power supply circuits, motor control systems, and DC-DC converters due to its low on-resistance and high-speed switching capabilities.  

With a robust design, the **2SK932-22-TB-E** offers excellent thermal performance, ensuring reliability in demanding environments. Its low gate charge and threshold voltage make it suitable for energy-efficient designs, reducing power losses in high-frequency applications.  

Key features include a high drain-source voltage rating and a compact package, making it ideal for space-constrained designs. Engineers often select this MOSFET for its balance of performance, durability, and cost-effectiveness.  

Whether used in industrial automation, consumer electronics, or automotive systems, the **2SK932-22-TB-E** provides a dependable solution for power control needs. Its specifications align with modern efficiency standards, making it a preferred choice for designers seeking optimized power handling in their circuits.  

For detailed electrical characteristics and application guidelines, referring to the datasheet is recommended to ensure proper implementation in circuit designs.

Partnumber Manufacturer Quantity Availability
2SK932-22-TB-E,2SK93222TBE SANYO 6000 In Stock

Description and Introduction

High-Frequency Low-Noise Amplifi er Applications The part 2SK932-22-TB-E is a MOSFET transistor manufactured by SANYO. It is designed for high-speed switching applications and is commonly used in power supply circuits, motor control, and other electronic systems requiring efficient power management. The key specifications of the 2SK932-22-TB-E include:

- **Type**: N-channel MOSFET
- **Drain-Source Voltage (Vds)**: 600V
- **Drain Current (Id)**: 22A
- **Power Dissipation (Pd)**: 150W
- **Gate-Source Voltage (Vgs)**: ±30V
- **On-Resistance (Rds(on))**: 0.22Ω (typical)
- **Package**: TO-3P
- **Operating Temperature Range**: -55°C to 150°C

These specifications make it suitable for high-power and high-voltage applications.

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