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FGA180N33ATDTU from FSC,Fairchild Semiconductor

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FGA180N33ATDTU

Manufacturer: FSC

330 V PDP Trench IGBT

Partnumber Manufacturer Quantity Availability
FGA180N33ATDTU FSC 4500 In Stock

Description and Introduction

330 V PDP Trench IGBT **Introduction to the FGA180N33ATDTU by Fairchild Semiconductor**  

The FGA180N33ATDTU is a high-performance N-channel MOSFET designed by Fairchild Semiconductor to meet demanding power management requirements. With a voltage rating of 330V and a continuous drain current of 180A, this component is well-suited for high-power applications such as industrial motor drives, power supplies, and renewable energy systems.  

Featuring low on-resistance (RDS(on)) and fast switching capabilities, the FGA180N33ATDTU ensures efficient power conversion while minimizing heat dissipation. Its advanced trench technology enhances reliability and performance, making it ideal for rugged environments. The device also incorporates a robust TO-247 package, providing excellent thermal conductivity and mechanical durability.  

Engineers and designers will appreciate its optimized gate charge, which allows for reduced switching losses and improved efficiency in high-frequency circuits. Additionally, the MOSFET is designed with built-in protection against voltage spikes and thermal stress, ensuring long-term stability in critical applications.  

The FGA180N33ATDTU represents a balance of power handling, efficiency, and durability, making it a preferred choice for high-voltage, high-current systems. Its technical specifications and robust construction align with industry standards, offering a reliable solution for advanced power electronics.

Partnumber Manufacturer Quantity Availability
FGA180N33ATDTU Fairchild 2686 In Stock

Description and Introduction

330 V PDP Trench IGBT The FGA180N33ATDTU is a power MOSFET manufactured by Fairchild Semiconductor. Below are its key specifications:

- **Type**: N-Channel MOSFET  
- **Voltage Rating (VDS)**: 330V  
- **Current Rating (ID)**: 180A (continuous)  
- **Power Dissipation (PD)**: 500W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 0.018Ω (typical)  
- **Package**: TO-247  
- **Technology**: SuperFET® II (low gate charge, fast switching)  

This MOSFET is designed for high-power applications such as motor drives, inverters, and power supplies.  

(Note: Fairchild Semiconductor was acquired by ON Semiconductor in 2016.)

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