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FZ1500R33HL3 from INFINEON

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FZ1500R33HL3

Manufacturer: INFINEON

IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode

Partnumber Manufacturer Quantity Availability
FZ1500R33HL3 INFINEON 62 In Stock

Description and Introduction

IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode **Introduction to the FZ1500R33HL3 from Infineon**  

The **FZ1500R33HL3** is a high-performance **IGBT (Insulated Gate Bipolar Transistor) module** designed by Infineon for demanding power electronics applications. This module features a **3300V blocking voltage** and a **1500A current rating**, making it suitable for high-power industrial systems such as motor drives, renewable energy converters, and traction applications.  

Built with Infineon’s advanced **TrenchStop™ and NPT (Non-Punch-Through) IGBT technology**, the FZ1500R33HL3 offers low conduction and switching losses, enhancing efficiency in high-voltage circuits. Its robust construction ensures reliable operation under harsh conditions, while the low-inductance design minimizes voltage spikes during switching.  

The module includes an integrated **NTC temperature sensor** for thermal monitoring, improving system safety and longevity. Its press-pack housing facilitates efficient cooling, making it ideal for applications requiring high power density.  

Engineers and designers will appreciate the FZ1500R33HL3’s balance of performance, durability, and thermal management, making it a preferred choice for next-generation power conversion systems. Whether in industrial automation or energy infrastructure, this IGBT module delivers the reliability and efficiency needed for critical high-power applications.

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