| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IDB06S60C |
INFINEON|Infineon |
N/a |
50 |
 |
2nd Generation thinQ SiC Schottky Diode |
IDB06S60C , 2nd Generation thinQ SiC Schottky Diode
IDB09E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 70 ..
IDB09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB09E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 750R ..
IDB12E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 12 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
