| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD038N06N3G |
infineon|Infineon |
N/a |
1200 |
 |
OptiMOS3 Power-Transistor |
IPD039N03LG INF
IPD038N06N3G , OptiMOS3 Power-Transistor
IPD03N03LA ,OptiMOS®2characteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =70 ..
IPD03N03LAG , OptiMOS®2 Power-Transistor
IPD03N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
IPD03N03LBG ,OptiMOS 2 Power-TransistorcharacteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
IRL540N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91495AIRL540N®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyV = 100 ..
IRL540N. ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRL540NL ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
