OptiMOS(TM)3 Power-Transistor The **IPD053N06N3G** is a power MOSFET manufactured by **Infineon Technologies**. Below are its specifications, descriptions, and features based on factual data:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPD053N06N3G
- **Type:** N-Channel MOSFET
- **Technology:** OptiMOS™ 5
- **Voltage Rating (VDSS):** 60V
- **Current Rating (ID):** 53A (at 25°C)
- **On-Resistance (RDS(on)):** 5.3mΩ (max at VGS = 10V)
- **Gate Threshold Voltage (VGS(th)):** 2.5V (typical)
- **Gate Charge (Qg):** 24nC (typical at VGS = 10V)
- **Power Dissipation (PD):** 125W (at 25°C)
- **Package:** TO-252 (DPAK)
- **Operating Temperature Range:** -55°C to +175°C
### **Descriptions:**
- The **IPD053N06N3G** is a **60V N-Channel MOSFET** optimized for **high-efficiency power switching** applications.
- It is part of Infineon’s **OptiMOS™ 5** family, offering **low on-resistance and high current capability**.
- Designed for **automotive and industrial applications**, including **DC-DC converters, motor control, and power management**.
### **Features:**
- **Low RDS(on)** for reduced conduction losses.
- **High current handling** (53A continuous).
- **Fast switching performance** for improved efficiency.
- **AEC-Q101 qualified** for automotive applications.
- **Lead-free and RoHS compliant**.
- **Optimized for synchronous rectification** in SMPS (Switched-Mode Power Supplies).
This information is based on Infineon's official datasheet and product documentation. For detailed performance curves and application notes, refer to the manufacturer’s datasheet.
