| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD053N08N3G |
IN |
N/a |
1773 |
 |
OptiMOS3 Power-Transistor |
IPD05N03L INFINEON
IPD05N03L G INFINEON
IPD053N08N3G , OptiMOS3 Power-Transistor
IPD05N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 5.1mΩDS(on),max1)• Quali ..
IPD05N03LA G , OptiMOS®2 Power-Transistor
IPD05N03LAG , OptiMOS®2 Power-Transistor
IPD05N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =40 µ ..
IRL5602STRL ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable of accommodating diesizes up to HE ..
IRL5602STRLPBF ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a typ ..
IRL5602STRR ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a typ ..
