| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD135N03LG |
INFINEON|Infineon |
N/a |
3200 |
 |
OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters |
IPD135N08N INF
IPD13N03LA INFINEON,applicationsI 30 AD• N-channel, logic level• Excellent gate charge x R product (FOM)DS(on)• Superior thermal resistance• 175 °C operating temperature ..
IPD135N03LG , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IPD13N03LA ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =20 ..
IPD14N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LLFeatureV 30 VDS• N-ChannelR 13.5 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3 ..
IPD200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPD20N03L ,Low Voltage MOSFETsFeatureV30 VDS• N-ChannelR 20 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3-1 ..
IRLI520G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI520N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD - 9.1496AIRLI520NPRELIMINARY®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Tech ..
IRLI520NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
