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IPS031N03LG from INFINEON

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IPS031N03LG

Manufacturer: INFINEON

OptiMOS?3 Power-Transistor

Partnumber Manufacturer Quantity Availability
IPS031N03LG INFINEON 175 In Stock

Description and Introduction

OptiMOS?3 Power-Transistor The **IPS031N03LG** is a power MOSFET manufactured by **Infineon Technologies**. Below are its key specifications, descriptions, and features based on factual data:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **RDS(on) (Max):** 3.1mΩ at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 45W  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- Designed for high-efficiency power switching applications.  
- Optimized for low conduction and switching losses.  
- Suitable for automotive and industrial applications.  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Enhances efficiency in power conversion.  
- **Fast Switching Speed:** Improves performance in high-frequency applications.  
- **AEC-Q101 Qualified:** Ensures reliability for automotive use.  
- **Avalanche Energy Rated:** Provides robustness in rugged environments.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based on Infineon's official datasheet for the IPS031N03LG MOSFET.

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