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IXFK73N30 from IXYS

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IXFK73N30

Manufacturer: IXYS

HiPerFET Power MOSFETs

Partnumber Manufacturer Quantity Availability
IXFK73N30 IXYS 53 In Stock

Description and Introduction

HiPerFET Power MOSFETs The IXFK73N30 is a power MOSFET manufactured by IXYS. Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Voltage Rating (VDSS):** 300V  
- **Current Rating (ID):** 73A (continuous at 25°C)  
- **Pulsed Drain Current (IDM):** 292A  
- **Power Dissipation (PD):** 600W (at 25°C case temperature)  
- **On-Resistance (RDS(on)):** 0.028Ω (max at VGS = 10V)  
- **Gate Threshold Voltage (VGS(th)):** 3V (min) to 5V (max)  
- **Gate Charge (Qg):** 160nC (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-264 (3-lead)  

### **Descriptions:**  
- The IXFK73N30 is an N-channel power MOSFET designed for high-power switching applications.  
- It features low on-resistance and high current handling capability, making it suitable for power supplies, motor control, and inverters.  
- The device is optimized for fast switching performance and efficiency.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses.  
- **High current capability** for demanding power applications.  
- **Fast switching speed** for improved efficiency.  
- **Avalanche energy rated** for ruggedness in harsh conditions.  
- **TO-264 package** for efficient thermal dissipation.  

For detailed datasheet information, refer to the official IXYS documentation.

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